Bipolar Transistors

The Bipolar transistor portfolio is built on successive generations of our innovative matrix emitter process. Leading edge designs and process innovation have extended our leadership in building ultra-low saturation, fast switching transistors.

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Detailed Description for Bipolar Transistors

A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.

There are two major types of bipolar transistor, called PNP and NPN. A PNP transistor has a layer of N-type semiconductor between two layers of P-type material. An NPN transistor has a layer of P-type material between two layers of N-type material. In P-type material, electric charges are carried mainly in the form of electron deficiencies called holes. In N-type material, the charge carriers are primarily electrons.

The bipolar transistor has advantages and disadvantages relative to the field-effect transistor (field-effect transistor). Bipolar devices can switch signals at high speeds, and can be manufactured to handle large currents so that they can serve as high-power amplifiers in audio equipment and in wireless transmitters. Bipolar devices are not especially effective for weak-signal amplification, or for applications requiring high circuit impedance.

Bipolar transistors are fabricated onto silicon integrated circuit (IC) chip. A single IC can contain many thousands of bipolar transistors, along with other components such as resistors, capacitors, and diodes.

The Bipolar transistor portfolio is built on successive generations of our innovative matrix emitter process. Leading edge designs and process innovation have extended our leadership in building ultra-low saturation, fast switching transistors.

Best-in-Class Performance

With focus on optimizing processes for the lowest saturation voltage, reduced die area and subsequently improved switching performance, the consequent reduction in power dissipation allows ever smaller surface mount packages, which still meet the demands of the target applications. The inherent ruggedness to ESD of the Bipolars along with their very low specific on-resistance also make them very cost effective alternatives to MOSFET technology in a wide range of circuit topologies.

Application:

·         Market demands for improved electronic systems solutions, whether in terms of improved efficiency, increased power density, or just cost reduction, drive all our application specific products.

·         Avalanche transistors, Gate drivers and H-bridge devices have all been developed to create dedicated solutions driven by customer needs and combine the benefits of the exceptional transistor die performance with Diodes packaging expertise.


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